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GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp Additive Material: Copper Foam

$332.93

Quantity
Description

Material: Copper Foam

5kg 280mm 220m 2

180  pm/V

Doping:                         Undoped

Please click here to see Dislocation vs Thickness of GaN template

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp Additive Material: Copper FoamSpecifications: GaP single crystal wafer Doping: Zn doped Type of conductivity: P type Size: 2" diameter x 0. 45mm Orientation: (111)B Polished: one side polished Resistivity: 4. 2E 1 ohm. cm Mobility: 70 cmE2 Vs Carrier Concentration: 2. 1E17cmE 3 EPD: 2. 6E4 cmE 2 Surface finish (RMS or Ra) : < 8A Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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