Al2O3 - Sapphire Wafer, C-plane <0001>, 10x5x1.0mm, 1 sp IC Tray Boxes 06 @ 0 oC 25

06 @ 0 oC    25

71 Array (Capacity):  14*15=200

8% ( 998) Al2O3 material

Conductive type:        Si   n- type

please ensure the volume of sample powder in all 32 pressing dies are the same

Al2O3 - Sapphire Wafer, C-plane <0001>, 10x5x1.0mm, 1 sp IC Tray Boxes 06 @ 0 oC 25Features: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 mm x 5 mm x 1. 0 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with