Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm DyScO3 26'' L (670mm)

26'' L (670mm)

Typical Macro defect Density: <5cm^-2

GF-20A Unit connects two Gas Purifier ( one for de-oxygen and another for de-humidity ) together by stainless steel pipe and two valves and ready to install to any MTI gas mixing system

Application Notes If you are going to make CR2016

which allows the glove box to vacuum the chamber to remove moisture and oxygen without expensive inert gas purging

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm DyScO3 26'' L (670mm)Single crystal: Si, Prime Grade Conductivity: P type B doped Resistivity: 0. 001 0. 005ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 (+ 0. 025) mm Orientation: (100) + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma